MT53E256M32D2DS-053 WT:B vs MT53E256M32D2DS-046 对比

详细并排对比 MT53E256M32D2DS-053 WT:B 出自 Micron Technology 和 MT53E256M32D2DS-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53E256M32D2DS-053 WT:B MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron

MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron

MT53E256M32D2DS-053 WT:B ✓ 量产中
Micron Technology
MT53E256M32D2DS-046 MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology

MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology

MT53E256M32D2DS-046 ✓ 量产中

规格对比

参数 MT53E256M32D2DS-053 WT:B MT53E256M32D2DS-046
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $21.90 $9.10
存储器类型 LPDDR4 SDRAM (Mobile DRAM) LPDDR4 SDRAM (Mobile DRAM)
Density 8 Gbit (256M x 32) 8 Gbit
存储组织 256M x 32 256M x 32
数据速率 1866 Mbps/pin (1.866 GHz) [DATA_NEEDED: data rate]
Supply Voltage (VDD2/VDDQ) 1.1 V —
Operating Temperature (WT grade) -30C to +85C —
封装 200-ball WFBGA, 10 x 14.5 mm 200-WFBGA (10 x 14.5 mm)
安装类型 Surface Mount (BGA) Surface Mount
Self-Refresh Auto self-refresh with built-in temperature sensor —
特性 Auto precharge, write leveling, ZQ calibration —
Bus Width 32-bit —
Peak Bandwidth (per device) approximately 7.46 GB/s (32-bit x 1866 Mbps) —
RoHS 状态 Compliant (per JLCPCB/LCSC listing) [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: MSL level] —
Access Time / CAS Latency [DATA_NEEDED: CL at 1866 Mbps] —
Refresh Interval [DATA_NEEDED: tREFI specification] —
Package Height [DATA_NEEDED: max package height] —
Clock Frequency — 2133 MHz
Core Supply Voltage (VDD) — 1.1 V
Interface Supply Voltage (VDDQ) — [DATA_NEEDED: VDDQ voltage]
Operating Temperature (IT grade) — [DATA_NEEDED: IT temperature range]
Speed Grade — -046
Product Generation — MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation)
Automotive Qualification (AUT grade variant) — AEC-Q100 qualified (AUT:B variant)
Packaging (TR suffix) — Tape & Reel (TR) or Tray

数据手册与资源

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